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Influence of Ge content and annealing conditions on the PL properties of nc-Si1-xGex embedded in SiO2 matrix in weak quantum confined regime
Tuğay, Evrin; İlday, Serim; Turan, Raşit; Finstad, Treje G. (Elsevier Science Bv, 2014)Fabrication of Si (nc-Si), Ge (nc-Ge), and Si1-xGex (nc-Si1-xGex) nanocrystals embedded in SiO2 matrix is achieved by thermal annealing of magnetron-sputtered thin films. Effects of annealing conditions, namely duration ...