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dc.contributor.authorAtasoy, Yavuz
dc.contributor.authorBaşol, Bülent M.
dc.contributor.authorOlgar, Mehmet Ali
dc.contributor.authorTomakin, Murat
dc.contributor.authorBacaksız, Emin
dc.date.accessioned2020-12-19T19:41:58Z
dc.date.available2020-12-19T19:41:58Z
dc.date.issued2018
dc.identifier.citationAtasoy, Y., Başol, B.m., Olgar, M.A., Tomakin, M. & Bacaksız, E. (2018). Cu(In,Ga)(Se,Te)(2) films formed on metal foil substrates by a two-stage process employing electrodeposition and evaporation. Thin Solid Films, 649, 30-37. https://doi.org/10.1016/j.tsf.2018.01.025en_US
dc.identifier.issn0040-6090
dc.identifier.urihttps://doi.org/10.1016/j.tsf.2018.01.025
dc.identifier.urihttps://hdl.handle.net/11436/1862
dc.descriptionOlgar, Mehmet Ali/0000-0002-6359-8316;en_US
dc.descriptionWOS: 000427524100006en_US
dc.description.abstractCu(In,Ga)(Se,Te)(2) or CIGST films were grown over molybdenum coated stainless steel foil substrates using a two-stage technique. the process involved deposition of a Cu-In-Ga/Se-Te precursor stack over the Mo layer using electrodeposition for the metals and evaporation for the chalcogens. the stack was then annealed at 600 degrees C to initiate reaction between the constituent elements. the reacted films were characterized in terms of their structural, compositional, electrical and optical properties. Results were compared to films obtained using all-evaporated precursor stacks formed on glass substrates. It was observed that the compositional control and the morphological properties of the compound layers grown on the metal foil substrates employing electrodeposition and rapid thermal annealing were superior to the films obtained on glass substrates using evaporated precursors and slower temperature ramp rate during annealing. Glancing angle XRD measurements at the front and back surfaces of the layers showed that Ga distribution through the CIGT films was much more uniform than that through the CIGS layers. CIGST films, which contained both Se and Te had slightly Se-rich surface compared to their bulk.en_US
dc.language.isoengen_US
dc.publisherElsevier Science Saen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectCopper indium gallium seleno tellurideen_US
dc.subjectPentenary compounden_US
dc.subjectChalcopyrite thin filmen_US
dc.subjectCopper indium gallium selenideen_US
dc.subjectCopper indium gallium tellurideen_US
dc.subjectGallium gradienten_US
dc.titleCu(In,Ga)(Se,Te)(2) films formed on metal foil substrates by a two-stage process employing electrodeposition and evaporationen_US
dc.typearticleen_US
dc.contributor.departmentRTEÜ, Fen - Edebiyat Fakültesi, Fizik Bölümüen_US
dc.contributor.institutionauthorTomakin, Murat
dc.identifier.doi10.1016/j.tsf.2018.01.025
dc.identifier.volume649en_US
dc.identifier.startpage30en_US
dc.identifier.endpage37en_US
dc.relation.journalThin Solid Filmsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US


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