Current transport mechanism in CdS thin films prepared by vacuum evaporation method at substrate temperatures below room temperature
Citation
Tomakin, M., Altunbaş, M., Bacaksız, E. & Çelik, Ş. (2012). Current transport mechanism in CdS thin films prepared by vacuum evaporation method at substrate temperatures below room temperature. Thin Solid Films, 520(7), 2532-2536. https://doi.org/10.1016/j.tsf.2011.10.160Abstract
CdS thin films were deposited by vacuum deposition method at low substrate temperatures instead of the commonly used vacuum deposition at high substrate temperatures (T S > 300 K). The effect of low substrate temperature on the current transport mechanisms in polycrystalline CdS thin films has been studied as a function of temperature over the temperature range 100-300 K. Both thermally assisted tunneling of carriers through and thermionic emission over the grain boundary potential have contributions to the conduction in the range 250-300 K for the sample prepared at 300 K substrate temperature. The dominant conduction mechanism of the samples prepared at 200 K and 100 K is determined as thermionic emission over 200 K and Mott's hopping process below 200 K. The Mott's hopping process is not applicable for the sample prepared at 300 K. © 2011 Elsevier B.V. All rights reserved.