Differential inelastic scattering cross-section of silicon and gallium arsenide semiconductor crystals

Abstract

Because of the extensive usage of silicon and gallium arsenide semiconductor crystals, the differential inelastic scattering cross-sections at 59.5 keV have been measured for various scattering angles changing from 120 to 150 degrees by using an energy dispersive X-ray fluorescence spectrometer. The spectrometer includes an Am-241 radio isotopes as photon source and a Si(Li) detector. Experimental results of differential inelastic scattering cross-sections compared with theoretical results. We found a good agreement between experimental and theoretical values in the standard uncertainties. To our best of knowledge, these results are first data in the differential inelastic scattering cross-sections of silicon and gallium arsenide crystals.