dc.contributor.author | Yılmaz, S. | |
dc.contributor.author | Tomakin, Murat | |
dc.contributor.author | Polat, İrem | |
dc.contributor.author | Bacaksız, Emin | |
dc.date.accessioned | 2023-09-04T07:28:01Z | |
dc.date.available | 2023-09-04T07:28:01Z | |
dc.date.issued | 2023 | en_US |
dc.identifier.citation | Yılmaz, S., Tomakin, M., Polat, İ. & Bacaksız, E. (2023). Facile synthesis and characterization of CdS thin films doped by yttrium atoms. Applied Physics A, 129(8), 579. https://doi.org/10.1007/s00339-023-06869-7 | en_US |
dc.identifier.issn | 0947-8396 | |
dc.identifier.issn | 1432-0630 | |
dc.identifier.uri | https://doi.org/10.1007/s00339-023-06869-7 | |
dc.identifier.uri | https://hdl.handle.net/11436/8235 | |
dc.description.abstract | A facile preparation and structural, optical and electrical characterization of undoped and Y-doped CdS thin films are demonstrated through spray pyrolysis changing doping concentration of yttrium atoms in CdS structure. X-ray diffraction pattern displays that CdS samples have polycrystalline hexagonal phase and as they are doped by various amounts of Y atoms, a fluctuation is observed in the preferential orientation. Scanning electron microscopy results show that compact and smooth surface morphology in addition to a slight reduction in grain size are obtained with increasing Y-doping up to 5%. Transparency of CdS thin films are noticeably enhanced by doping of 1% Y atoms. However, further increase of Y-doping towards 5% causes less transparent CdS films due to deterioration of crystal quality. Tauc analysis indicates presence of two direct bandgaps for each sample owing to spin-orbit splitting of valence band of CdS. CdS films have bandgaps of 2.48 eV (E-g1) and 2.85 eV (E-g2). Whereas E-g1 value decreases to 2.46 for 5% Y-doping, E-g2 value increases to 2.92 eV for the same Y-doping concentration. Photoluminescence data show that an obvious red shift is observed for blue band regardless of Y-doping concentration. 3% Y-doped CdS thin films display the best carrier density of 4.37 x 10(14) cm(-3) and resistivity of 3.78 x 10(3) & omega;.cm, which originate from substitutional incorporation of Y3+ ions at Cd2+ ions. Therefore, it can be stated that Y-doped CdS thin films exhibit better electrical and optical properties that are of vital importance in thin film-based solar cells as a window layer. | en_US |
dc.language.iso | eng | en_US |
dc.publisher | Springer | en_US |
dc.rights | info:eu-repo/semantics/closedAccess | en_US |
dc.subject | CdS thin films | en_US |
dc.subject | Y-doping | en_US |
dc.subject | Spray pyrolysis | en_US |
dc.subject | Optical properties | en_US |
dc.subject | Electrical characteristics | en_US |
dc.title | Facile synthesis and characterization of CdS thin films doped by yttrium atoms | en_US |
dc.type | article | en_US |
dc.contributor.department | RTEÜ, Fen - Edebiyat Fakültesi, Fizik Bölümü | en_US |
dc.contributor.institutionauthor | Tomakin, Murat | |
dc.identifier.doi | 10.1007/s00339-023-06869-7 | en_US |
dc.identifier.volume | 129 | en_US |
dc.identifier.issue | 8 | en_US |
dc.identifier.startpage | 579 | en_US |
dc.relation.journal | Applied Physics A | en_US |
dc.relation.publicationcategory | Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı | en_US |