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dc.contributor.authorKanmaz, Imran
dc.contributor.authorTomakin, Murat
dc.contributor.authorUzum, Abdullah
dc.date.accessioned2024-08-16T07:32:35Z
dc.date.available2024-08-16T07:32:35Z
dc.date.issued2024en_US
dc.identifier.citationKanmaz, I., Tomakin, M., & Uzum, A. (2024). Analysis of CeO2/SiO2 double-layer thin film stack with antireflection effect for silicon solar cells. Journal of Materials Science: Materials in Electronics, 35(22), 1497. https://doi.org/10.1007/s10854-024-13245-5en_US
dc.identifier.issn0957-4522
dc.identifier.urihttps://doi.org/10.1007/s10854-024-13245-5
dc.identifier.urihttps://hdl.handle.net/11436/9266
dc.description.abstractThis study introduces CeO2/SiO2 double-layer film stacks and its antireflection coating effect. Optical properties were analyzed by spectrophotometer measurements; surface morphology and cross-sections were observed by Scanning Electron Microscopy (SEM); elemental distributions and crystallographic properties were determined by Energy Dispersive Spectroscopy (EDS) and X-ray Diffraction (XRD) measurements. Average reflectance of single-layer 0.3MSiO2, 0.6MSiO2, and 0.3MCeO2 thin films were 30.54%, 20.12%, and 14.23%, respectively. Average reflectance was decreased significantly down to 5.9% by 0.3MCeO2/0.6MSiO2 double-layer thin films comparing to those of the results of single-layer films and bare silicon surface reflection (~40%). Antireflective effect of the films on solar cells was estimated by simulation using the measured reflection data. Simulated solar cells indicate that 0.3MCeO2/0.6MSiO2 double-layer antireflective coatings are capable to increase the efficiency significantly and conversion efficiency of 21.7% could be achieved.en_US
dc.language.isoengen_US
dc.publisherSpringeren_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.titleAnalysis of CeO2/SiO2 double-layer thin film stack with antireflection effect for silicon solar cellsen_US
dc.typearticleen_US
dc.contributor.departmentRTEÜ, Fen - Edebiyat Fakültesi, Fizik Bölümüen_US
dc.contributor.institutionauthorKanmaz, İmran
dc.contributor.institutionauthorTomakin, Murat
dc.identifier.doi10.1007/s10854-024-13245-5en_US
dc.identifier.volume35en_US
dc.identifier.issue22en_US
dc.identifier.startpage1497en_US
dc.relation.journalJournal of Materials Science: Materials in Electronicsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US


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