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dc.contributor.authorKanmaz, İmran
dc.contributor.authorTomakin, Murat
dc.contributor.authorAytemiz, Göksel
dc.contributor.authorManır, Melih
dc.contributor.authorNevruzoğlu, Vagif
dc.date.accessioned2024-10-08T05:34:53Z
dc.date.available2024-10-08T05:34:53Z
dc.date.issued2024en_US
dc.identifier.citationKanmaz, İ., Tomakin, M., Aytemiz, G., Manır, M., & Nevruzoğlu, V. (2024). Influence of Thermal Annealing on the Band-Gap of TiO2 Thin Films Produced by the Sol-Gel Method. Recep Tayyip Erdoğan Üniversitesi Fen ve Mühendislik Bilimleri Dergisi, 5(1), 49–56. https://doi.org/10.53501/rteufemud.1395013en_US
dc.identifier.urihttps://doi.org/10.53501/rteufemud.1395013
dc.identifier.urihttps://hdl.handle.net/11436/9536
dc.description.abstractIn our study, we used the spin coating method to produce TiO2 thin films on quartz glass using a solution with a concentration of 0.5M. After the coating process, the samples were dried in air at 100°C. Subsequently, annealing was carried out at four different temperatures, namely 300°C, 500°C, 700°C, and 900°C, for a duration of 60 minutes. Comprehensive analyzes including Scanning Electron Microscopy (SEM), Energy Dispersive Spectroscopy (EDS), X-ray Diffraction (XRD) and optical measurements were carried out to investigate the structural and optical properties of the samples. Optical measurements showed that the highest average transmittance values were obtained for samples annealed at 300°C and 500°C, with percentages of 82.33% and 80.25%, respectively. Remarkably, the maximum transmittance of 99.58% was recorded for films annealed at 500°C. Additionally, band-gap calculations were performed using the Tauc method based on optical measurements of samples exposed to different annealing temperatures. According to our results, samples annealed at 300°C, 500°C, 700°C, and 900°C exhibited band-gap values of 3.42eV, 3.40eV, 3.38eV, and 3.29eV, respectively.en_US
dc.language.isoengen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectTiO2 Thin filmen_US
dc.subjectSol-gelen_US
dc.subjectBand-gapen_US
dc.subjectThermal annealingen_US
dc.titleInfluence of thermal annealing on the Band-Gap of tio2 thin films produced by the Sol-Gel methoden_US
dc.title.alternativeSol-Jel yöntemiyle üretilen tio2 i̇nce filmlerinin bant aralığı üzerinde termal tavlamanın etkisien_US
dc.typearticleen_US
dc.contributor.departmentRTEÜ, Fen - Edebiyat Fakültesi, Fizik Bölümüen_US
dc.contributor.institutionauthorKanmaz, İmran
dc.contributor.institutionauthorTomakin, Murat
dc.contributor.institutionauthorAytemiz, Göksel
dc.contributor.institutionauthorManır, Melih
dc.contributor.institutionauthorNevruzoğlu, Vagif
dc.identifier.volume5en_US
dc.identifier.issue1en_US
dc.identifier.startpage49en_US
dc.identifier.endpage56en_US
dc.relation.journalRecep Tayyip Erdoğan Üniversitesi Fen ve Mühendislik Bilimleri Dergisien_US
dc.relation.publicationcategoryMakale - Ulusal Hakemli Dergi - Kurum Öğretim Elemanıen_US


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